Electron Reflection and Interference in the GaAs/AlAs-Al Schottky Collector Resonant Tunneling Diode
نویسندگان
چکیده
Schottky Collector Resonant Tunneling Diodes (SCRTDs) have potential for increased oscillator bandwidth, but may be prone to electron reflection at the semiconductor-metal interface of the Schottky collector. This reflection has been observed previously with in-situ MBE deposited collector metal, manifested as interference oscillations on the rising slope of the resonant current. This paper extends the room temperature results of that work to cover the 1.5 K → 300 K range, revealing valuable information on the semiconductormetal interface, scattering rates, scattering mechanisms, peak to valley ratios, electron distribution and electron transport. The SCRTD oscillation strength was found to depend on the above-barrier reflection coefficient of the col-
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